| PART |
Description |
Maker |
| LH28F160S3HT-L10A LHF16KA7 |
Flash Memory 16M (2MB 】 8/1MB 】 16)
Flash Memory 16M (2MB 8/1MB 16)
|
SHARP[Sharp Electrionic Components]
|
| LH28F160S5NS-L70 |
Flash Memory 16M (2MB x 8/1MB x 16)
|
SHARP
|
| LH28F160S3T-L10 LH28F160S3T-L10A LHF16KA6 |
Flash Memory 16M (2MB x 8/1MB x 16)
Flash Memory 16M (2MB bb 8/1MB bb 16)
Flash Memory 16M (2MB 8/1MB 16)
Flash Memory 16M (2MB 】 8/1MB 】 16)
|
SHARP[Sharp Electrionic Components]
|
| LH28F160S5H-L |
16M-bit (2MB x 8/1MB x 16) Smart 5 Flash Memories(16M(2Mx 8/1Mx 16) Smart5 技术闪速存储器)
|
Sharp Corporation
|
| M27V320-150N6 M27V320 M27V320-100M1 M27V320-100M6 |
2.5-V/3.3-V 20-Bit Buffers/Drivers With 3-State Outputs 56-SSOP -40 to 85 32兆位4Mb的x8或检察官办公室的2Mb x16存储
2.5-V/3.3-V 20-Bit Buffers/Drivers With 3-State Outputs 56-TVSOP -40 to 85
32 Mbit 4Mb x8 or 2Mb x16 OTP EPROM
32 MBIT (4MB X8 OR 2MB X16) OTP EPROM
|
SGS Thomson Microelectronics
STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| M27W032-110N1T M27W032 M27W032-100M1T M27W032-100N |
32 Mbit 2Mb x16 3V Supply FlexibleROM Memory
16 Mbit 1Mb x16 3V Supply FlexibleROM Memory
32 Mbit 2Mb x16 3V Supply FlexibleROM⑩ Memory
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| 27C160 M27C160 M27C160-100B1 M27C160-100B1TR M27C1 |
16 Mbit 2Mb x8 or 1Mb x16 UV EPROM and OTP EPROM 16兆位Mb x8兆x16紫外线存储器和OTP存储
IC BUFF/DRVR 16BIT 3ST 48-TSSOP 16兆位Mb x81兆x16紫外线存储器和OTP存储
16-Bit Transparent D-Type Flip-Flop 16兆位Mb x8兆x16紫外线存储器和OTP存储
IC ADRSS DRVR REG 1-4BIT 56TSSOP 16兆位Mb x8兆x16紫外线存储器和OTP存储
16-Bit Bi-directional Bus Transceiver
|
STMicroelectronics N.V.
意法半导
ST Microelectronics
|
| IS61NLP6B436A-200TQBI IS61NVP6B436A-200TQBI IS61NL |
64K x 32, 64K x 36, and 128K x 18 2Mb, PIPELINE (NO WAIT) STATE BUS SRAM
|
ISSI[Integrated Silicon Solution, Inc]
|
| GS72116TP-10 GS72116TP-15 GS72116TP GS72116J-15 GS |
15ns 128K x 16 2Mb asynchronous SRAM
8ns 128K x 16 2Mb asynchronous SRAM
10ns 128K x 16 2Mb asynchronous SRAM
12ns 128K x 16 2Mb asynchronous SRAM
|
GSI[GSI Technology]
|
| IS61NVP6436A-200TQI IS61NVP12818A-250TQ IS61NVP128 |
64K x 32, 64K x 36, and 128K x 18 2Mb, PIPELINE (NO WAIT) STATE BUS SRAM 128K X 18 ZBT SRAM, 3.1 ns, PQFP100
64K x 32, 64K x 36, and 128K x 18 2Mb, PIPELINE (NO WAIT) STATE BUS SRAM 128K X 18 ZBT SRAM, 2.6 ns, PQFP100
|
Integrated Silicon Solution, Inc.
Integrated Silicon Solution...
|
| MT58L64L18F MT58L32L32F MT58L32L36F |
32K x 323.3V I/O, Flow-Through SyncBurst SRAM(1Mb,3.3V输入/输出,流通式同步脉冲静态RAM)
32K x 363.3V I/O, Flow-Through SyncBurst SRAM(1Mb,3.3V输入/输出，流通式同步脉冲静态RAM)
64K x 18, 3.3V I/O, Flow-Through SyncBurst SRAM(1Mb,3.3V输入/输出,流通式同步脉冲静态RAM) 64K的18.3V的I / O的流量通过SyncBurst的SRAM兆，3.3V的输输出，流通式同步脉冲静态内存）
|
Micron Technology, Inc.
|
| GS71116J-12I GS71116TP-12I GS71116TP-15I GS71116TP |
15ns 64K x 16 1Mb asynchronous SRAM
10ns 64K x 16 1Mb asynchronous SRAM
12ns 64K x 16 1Mb asynchronous SRAM
|
List of Unclassifed Manufacturers
ETC[ETC]
GSI Technology
|
